– W. Ciccognani, S. Colangeli, A. Serino, L. Pace, S. Fenu, P. E. Longhi, E. Limiti, J. Poulain, R. Leblanc, “Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies,” 14th Eur. Microw. Integr. Circuits Conf., pp. 1–4, Paris, 29 September – 4 October 2019.
– L. Pace, W. Ciccognani, S. Colangeli, P. E. Longhi, E. Limiti, and R. Leblanc, “A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology,” PRIME 2019 – 15th Conf. Ph.D. Res. Microelectron. Electron. Proc., pp. 161–164, Lausanne, 15-18 July 2019.
– G. Polli, P. E. Longhi, S. Colangeli, S. Fenu, F. Costanzo, W. Ciccognani, E. Limiti, “GaN/Si ka-band SPDT for observation payloads,” in Asia-Pacific Microwave Conference Proceedings, APMC, Singapore, 10-13 December 2019, vol. 2019-Decem, no. 776322, pp. 288–290.
– S. Colangeli, W. Ciccognani, A. Serino, P. E. Longhi, L. Pace, J. Poulain, R. Leblanc, E. Limiti, “Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices,” IEEE Trans. Microw. Theory Tech., vol. 68, no. 7, pp. 2571–2578, 2020.
– P. E. Longhi, S. Colangeli, W. Ciccognani, L. Pace, R. Leblanc, and E. Limiti, “C to V-band cascode distributed amplifier design leveraging a double gate length gallium nitride on silicon process,” IEEE MTT-S Int. Microw. Symp.(IMS) Dig., vol. 2020-August, pp. 409–412, 2020.
– L. Pace, S. Colangeli, W. Ciccognani, P. E. Longhi, E. Limiti, R. Leblanc, M. Feduale, F. Vitobello, “Design and validation of 100 nm GaN-On-Si Ka-Band LNA based on custom noise and small signal models,” MDPI Electronics, vol. 9, no. 1, p. 150, 2020.
– L. Pace, F. Costanzo, P. E. Longhi, W. Ciccognani, S. Colangeli, A. Suriani, R. Leblanc, E. Limiti, “Design of a Ka-band Single-Chip Front-End based on a 100 nm GaN-on-Si technology,” 2020 Int. Work. Integr. Nonlinear Microw. Millimetre-Wave Circuits, INMMiC 2020 – Proc., pp. 2020–2022, 2020.
– S.Colangeli, W. Ciccognani, P. E. Longhi, L. Pace, J. Poulain, R. Leblanc, E. Limiti, “Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths”, MDPI Electronics, Vol.10, n°1, 134, January 2021, pp.1-17.
– L.Pace, P.E. Longhi, W. Ciccognani, S. Colangeli, R. Leblanc, E. Limiti, “A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies”, 50th Eur. Microw. Conf. (EUMC 2020), 10-15 January 2021, Accepted Paper, IN PRESS